Chalcogenide Perovskite BaZrS3: Thin Film Growth by Sputtering and Rapid Thermal Processing

Dry and Wet Wear Characteristic of TiO2 Thin Film Prepared by Magnetic Sputtering in Ringer Solution

In this research, a thin film of TiO2 was applied on AZ91D using the method of magnetic sputtering. Microstructure investigations were done using field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD). Wear resistance for the coating was investigated using the pin on the disk in the form of dry and in the Ringer's solution. After this test, the worn surface of the sampl...

Processing Parameters and Property of AZO Thin Film Prepared by Magnetron Sputtering

As we all know, transparent and conductive Al:ZnO (AZO) films are being considered for manufacturing transparent electrodes in flat panel displays, solar cells and organic light emitting diodes due to their high electro optical quality, high material availability and low material cost for large area applications. In this experiment, AZO thin films were prepared on glass substrate by Magnetron S...

Thin-film TiPbO3 varistors obtained by two-source magnetron sputtering

Thin-Film Flow Influenced by Thermal Noise

We study the influence of thermal fluctuations on the dewetting dynamics of thin liquid films. Starting from the incompressible Navier-Stokes equations with thermal noise, we derive a fourth-order degenerate parabolic stochastic partial differential equation which includes a conservative, multiplicative noise term—the stochastic thin-film equation. Technically, we rely on a long-wave-approximat...

IN-SITU THIN FILM GROWTH OF PbTiO3 BY MULTI TARGET SPUTTERING

The in-situ reactive sputter deposition of PbTiO3 on Pt/Ti/SiO2/Si from two metallic targets was investigated. A minimal lead oxide flux of two to three times the titanium oxide flux is needed in order to obtain stoichiometric films with the perovskite structure. For higher fluxes, the Pb/Ti ratio in the film stays at the stoichiometric value 1; the orientation changes from random to <100>; and...